 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOSFET MODULE FEATURES * Trench Gate MOS FET Module Single 560A /150V OUTLINE DRAWING PHM5601 * Super Low Rds(ON) 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 650g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR M4 M8 PHM5601 150 +/ - 20 560 (Tc=25C) 440 (Tc=25C) 1,120 Tc=25C) 1,780 Tc=25C) -40 to +150 -40 to +125 2,500 3.0 1.4 10.5 Unit V V A A W C C V N*m Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Gate Terminals Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate-Source Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Rise Time Turn-On Delay Time Fall Time Turn-Off Delay Time IDSS IGSS VGS(th) rDS(on) VDS(on) gfs Cies Coss Crss tr td(on) VDS=VDSS,VGS=0V VGS=+/- 20V,VDS=0V VDS=VGS, ID=16mA VGS=10V, ID=560A VGS=10V, ID=560A VDS=15V, ID=560A VDS=10V,VGS=0V,f=1MHz VDD= 80V ID=280A VGS= -5V, +10V RG= 1.2 ohm Min. 1.0 - Typ. 2.0 1.6 1.0 110 13 13 400 380 170 1,100 Max. 3.2 3.2 3.2 2.0 1.2 - Unit mA A V m-ohm V S nF nF nF ns tf td(off) FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time IS ISM VSD trr Duty=50%. D.C. (Terminal Temperature=80C IS=560A IS=560A, -dis/dt=1,100A/s Min. - Typ. 1.6 130 Max. 560 450 1,120 2.0 - Unit A A V ns Unit C/W THERMAL CHRACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Symbol Rth(j-c) Rth(c-f) Test Condition Mounting surface flat, smooth, and greased Min. - Typ. - Max. 0.07 0.035 PHM5601 OUTLINE DRAWING (Dimensions in mm) Fig.1- Output Characteristics (Typical) 1200 Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical) TC=25 2 1.8 VGE=10V 1000 4V 3V 250s PULSE TEST TC=25 250s PULSE TEST 8V Drain to Source Voltage V DS (V) 1.6 1.4 1.2 DrainCurrent I D (A) 800 ID=560A 1 0.8 0.6 0.4 0.2 600 400 ID=280A ID=140A 200 2V 00 0.5 1 1.5 2 2.5 3 3.5 4 0 0 2 4 6 8 10 12 14 16 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical) 2.5 Fig.4- Capacitance vs. Drain to Source Voltage (Typical) 150000 VGS=10V 250s PULSE TEST Drain to Source Voltage V DS (V) 2 125000 Ciss VGS=0V f=1MHZ TC=25 Capacitance C (nF) 1.5 ID=560A 100000 75000 1 ID=280A 50000 Coss 25000 0.5 ID=140A Crss 0 -50 0 50 100 150 0 0.5 1 2 5 10 20 50 80 Junction Temperature Tj () Drain to Source Voltage VDS (V) Fig.5- Gate Charge vs. Gate to Source Voltage (Typical) 16 Fig.6- Series Gate Impedance vs. Switching Time (Typical) 100 50 20 ID=560A VDD=20V 14 VDD=40V VDD=80V ID=280A TC=25 Gate to Source Voltage V GS (V) Switching Time t (s) 12 10 8 6 4 2 0 VDD=80V 10 5 2 1 0.5 0.2 td(off) tr td(on) tf 1 2 5 10 20 50 100 200 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0.1 Total Gate Charge Qg (nC) Series Gate Impedance RG () Fig.7- Drain Current vs. Switching Time (Typical) 1.2 Fig.8- Source to Drain Diode Forward Characteristics (Typical) 1200 1 td(off) VDD=80V RG=1.2 TC=25 TJ=125 TJ=25 1000 Switching Time t (s) Source Current I S (A) 0.8 800 0.6 600 0.4 td(on) 400 0.2 tr tf 200 0 0 100 200 300 400 500 600 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Drain Current ID (A) Source to Drain Voltage VSD (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) -IS=800A TJ=125 200 trr 100 50 IRrM 20 10 0 500 1000 1500 2000 2500 -di/dt (A/s) Fig.10- Maximun Transient Thermal Impedance 1x10 -1 (/W) Transient Thermal Impedance Rth (J-C) 3x10 -2 1x10 -2 3x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 1 10 1 SQUARE WAVE PULSE DURATION t (s) |
Price & Availability of PHM5601
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |